Choose Frames or No Frames? > 자유게시판

Thus the sprucing was stopped by the time when removal of the residual Al within the flat portion was accomplished, so that the surface of the Al interconnection was not polished more than what is necessary After sprucing, still remaining C movie 24 was eliminated in an O.sub.2 plasma. It shall be appreciated that within the course of movie formation the wiring metallic film thickness contained in the groove may be thicker than one within the flat region excluding the groove as in the second embodiment. Moreover, it shall be appreciated that after formation of the movie the wiring steel movie thickness within the region outdoors the groove may be made thinner than one in the groove, or the wiring steel movie outside the groove may be eliminated by a sure course of. That implies that the output signals overlap instead of simply loop one after another. The gasoline utilized for the sputtering was Ar, the background stress was lower than 10.sup.-Eight Torr, the sputtering strain was 8.times.10.sup.-3 Torr, and the utilized power was 6 KW, so as to form the primary Al film suppressing the formation of the native oxide movie thereon.

Ar gas was utilized within the sputtering, a background (vacuum) pressure was less than 10.sup.-8 Torr, a stress beneath sputtering was 3 .occasions.10.sup.-Three Torr, and an applied energy was 4 KW. A strain at the time of the etching is preferably controlled at 40 mTorr, and an applied power at the time of the etching is preferably 800 W. Thereafter, a residual resist is eliminated in an environment of oxygen plasma. Within the fourth embodiment, with reference to FIG. 17A, a thermal oxide movie 12 of 1 .mu.m thickness was grown on the Si substrate 11, and on the thermal oxide film there is formed a wiring sample groove 18 whose depth and width are 0.Four .mu.m and 0.6 .mu.m, respectively, by a photo-lithography and a reactive ion etching (RIE). With reference to FIG. 12A, a single-crystal Si was used for a substrate 11, and a thermal oxide film 12 was formed on the Si substrate eleven at thickness of a hundred nm. However, with reference to FIG. 16B, the grooves could also be organized in a plurality of equilateral triangles in a way that each corresponding aspect of the equilateral triangle is parallel.

Then, a shape for the mask pattern 13 is formed such that a plurality of straight-line-formed grooves are organized in parallel periodically. With reference to FIG. 16C, the grooves could even be organized in a saw form in a manner that an angle between the neighboring sides, an angle between a side and an extended line of the opposite facet, and an angle of extended line of each side are all 60 degrees. For example, with reference to FIG. 25A and FIG. 25B, in a wire crowded area, there could also be formed regions for storing excess wiring steel which is to not be crammed within the groove. In the electrode wiring structure, the C movie 24 is used for the wettability bettering layer, and the Al was filled into the groove by annealing to realize a single-crystallization. Within the fifth embodiment, the C movie 24 was used as a wettability improving layer so as to improve the wettability between the Al and the substrate, in order that effectivity of filling the Al into the groove was improved. Within the above expertise and calculation, there has been demonstrated that the fill-in efficiency to the groove is improved by bettering the wettability and on this case it was assumed that the quantity of material to be stuffed in is equal to or less than the quantity of the groove.

In the fifth embodiment:, a quantity of the wiring steel to be crammed into the groove is minimized and a uniformly stuffed wiring is realized by utilizing a wettability improved layer. Next, with reference to FIG. 12B, after a resist was utilized, a mask pattern thirteen was formed utilizing the same old photo-lithography. 17C and 17D, the above gadget was annealed utilizing a halogen lamp from a again side of the substrate below the identical vacuum background as within the sputtering for duration of 45 seconds. Moreover, the system could also be heated by a high-frequency induction heating, and in this case materials which is liable to be induction-heated shall be used particularly for the substrate of the wiring electrode. Moreover, when the wiring steel film located outside the groove is all removed, the wiring steel film could also be agglomerated. In case where the direct electrical contact with the Si substrate shouldn't be crucial, there could also be used insulators resembling MgO, Al.sub.2 O.sub.Three and so forth for Al. There are 6 neurons, and 4 motors (a neuron for every course the front pair and rear pair of motors can turn. The 4 motor design will be further enhanced with a 5th motor to allow it to turn.

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